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| (R) BTA16-xxxSW BTB16-xxxSW HIGH PERFORMANCE LOGIC LEVEL TRIACS FEATURES IT(RMS) = 16A LOGIC LEVEL TRIGGERING: IGT 10mA HIGH SURGE CAPABILITY DESCRIPTION The BTA/BTB16-xxxSW triacs are using a high performance glass passivated technology. These triacs are designed for applications requiring high inrush current performances such as fridge motor control, magnetron supply of microwave ovens, halogen range cookers, etc...). The high gate sensitivity makes them perfectly suited for direct gate triggering by microcontrollers and other logic circuits. G A1 A2 TO220AB ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value for fusing Critical rate of rise of on-state current Gate supply : IG = 20mA , tr 100ns Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Parameter BTA BTB Tc = 85 C Tc = 105 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 100 Hz 170 160 128 50 - 40 to + 150 - 40 to + 125 260 A2s A/s C C C A Value 16 Unit A Symbol VDRM VRRM VDSM Parameter BTA / BTB16-xxxSW 600 700 700 800 600 700 Unit V V Repetitive peak off-state voltage Tj = 125 C Non repetitive surge peak off-state voltage Tj = 125 C Tp 50 s May 1999 - Ed: 4C 1/5 BTA/BTB16-xxxSW THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for AC 360 conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 2.8 1.6 2.1 1.2 C/W Unit C/W C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 s) IGM = 4A (tp = 20 s). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant BTA/BTB16-xxxSW Value IGT VGT VGD IL VD=12V VD=12V (DC) RL=33 (DC) RL=33 Tj=25C Tj=25C Tj=125C Tj=25C I-II-III I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * (dI/dt)c * IT= 100mA gate open ITM= 22.5A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM gate open (dV/dt)c = 0.1V/s Without snubber Tj=25C Tj=25C Tj=25C Tj=125C Tj=125C Tj=125C Tj=125C MAX MAX MIN MAX MAX MAX MAX MAX MAX MIN MIN MIN 10 1.3 0.2 30 40 15 1.5 5 2 20 3.5 1 mA V A mA V/s A/ms mA V V mA Unit VD=VDRM RL=3.3k IG=1.2 IGT * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION BTB TRIAC : BTB : UNINSULATED BTA : INSULATED 16 - 600 CURRENT S SENSITIVITY W 3 QUADRANTS VOLTAGE 2/5 BTA/BTB16-xxxSW Fig.1 : Maximum power dissipation versus RMS on-state current (resistive load). Fig.2-1 : Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances (BTA). 20 P(W) 20 = 180 P(W) Rth=2 C/W Rth=1 C/W Rth=0 C/W Tcase (C) 85 95 105 115 15 = 120 15 Rth=4 C/W 10 = 60 = 90 10 5 = 30 180 5 =180 Tamb(C) 40 60 80 100 120 140 IT(RMS)(A) 0 0 2 4 6 8 10 12 14 16 0 0 20 125 Fig.2-2 : Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig.3 : RMS on-state current versus case temperature. 20 P(W) Rth=2 C/W Rth=4 C/W Rth=1 C/W Tcase (C) Rth=0 C/W 18 105 IT(RMS)(A) =180 16 14 12 10 BTB BTA 15 10 115 8 6 4 5 =180 Tamb(C) 0 0 20 40 60 80 100 120 140 125 2 0 0 25 Tcase(C) 50 75 100 125 Fig.4 : Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature (typical values). 1.00 2.5 Zth(j-c) IGT,IH[Tj]/IGT,IH[Tj=25C] 2.0 IGT Zth(j-a) 1.5 0.10 IH 1.0 0.5 tp(s) Tj(C) 1E+1 1E+2 5E+2 0.01 1E-3 1E-2 1E-1 1E+0 0.0 -40 -20 0 20 40 60 80 100 120 140 3/5 BTA/BTB16-xxxSW Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. Fig 7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. 140 120 100 80 60 40 20 0 ITSM(A) Tj initial=25C F=50Hz 1000 ITSM(A),It(As) Tj initial=25C 500 ITSM 200 It Number of cycles 1 10 100 1000 100 tp(ms) 1 2 5 10 Fig.8 : On-state characteristics (maximum values). 200 100 ITM(A) Tj max.: Vto=0.85V Tj=Tj max. Rt=25m 10 Tj=25C VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/5 BTA/BTB16-xxxSW PACKAGE MECHANICAL DATA TO220AB Plastic DIMENSIONS REF. B C Millimeters Min. Typ. Max. Min. Inches Typ. Max. b2 A a1 L F I A 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 15.90 0.598 0.147 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 0.102 0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 a2 B b1 b2 C c1 c2 e F l4 a1 c2 l3 l2 a2 I I4 L 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M c1 l2 l3 M MARKING Type Marking BTA16-600SW BTA16-700SW BTB16-600SW BTB16-700SW Weight : 2.1g BTA16 600SW BTA16 700SW BTB16 600SW BTB16 700SW Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5 |
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